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素微微纳结构加工Micro/nano fabrication

科研样品 · 企业研发RESEARCH SAMPLES · R&D

微纳加工Micro/nano fabrication需求评估与资源对接Process & resource support

从材料、图形到工艺选择,和你一起明确下一步。Clarify the materials, patterns and process choices for your next sample.

聊加工需求Discuss a project↗浏览工艺Explore processes→

掩模对准Align the mask

开口决定受光位置。Openings select where light reaches.

自动演示保持整体视角。探索点短暂提示后隐去;轻点模型唤出小点,再点小点或滚轮缩放进入细节。拖动可360度旋转,不暂停工艺。细节中拖偏后轻点模型回正,再点推进知识点。返回整体会平滑退出细节并继续播放,不重播。当前工艺结束后先退回整体,再播放下一项独立工艺。这不是必经加工流程。方向键旋转,加减键缩放,Enter继续,Home返回整体。Autoplay stays in the overall view. The exploration point appears briefly, then fades. Tap the model to reveal it; select the point or zoom to enter details. Drag without pausing. In detail view, tap to recenter after dragging, then tap to advance. Overview returns smoothly without restarting. Each completed study returns to the overall view before the next independent study. Studies are not a mandatory route. Arrows rotate, plus/minus zoom, Enter advances, Home returns.

正胶 · 曝光Positive resist · Exposure

探索微纳工艺Explore Micro-Nano Processes↗

紫外掩模曝光UV mask exposure

选择一个原理演示Choose a principle study

表面准备Surface preparation

曝光与直写Exposure & direct writing

图形转移与复制Pattern transfer & replication

沉积镀膜与生长Deposition & growth

掺杂与热处理Doping & thermal processing

独立原理示意,非实际加工顺序Independent studies, not a fabrication sequence

观察与原理Inspect+

正胶光刻:曝光区域经显影去除,留下开口。Positive resist: development removes the exposed regions.

独立原理示意 · 非实物、等比例仿真或通用工艺顺序;剥离上移仅为移除示意Independent principles · Not a sample, scale simulation or universal sequence. Lifted caps symbolize removal.

光刻胶Resist 掩模Mask 基底Substrate
当前步骤与完整原理Step & principle+

原理参考Source↗ 查看相关工艺Related process↗
自动巡览 · 概念示意Auto · Concept study
图形定义Pattern definition