湿法清洗Wet cleaning
针对污染类型选择表面清洗，并结合漂洗、干燥控制残留。Cleaning targets contamination and uses compatible rinsing and drying to control residues.
微纳工艺图谱Micro/nano process atlas
这是可组合的工艺体系，不是一条必经生产线。曝光、材料去除、薄膜生长与结构集成，各有自己的边界。A set of combinable methods, not a mandatory sequence. Exposure, removal, growth and integration have distinct roles.
紫外掩模曝光UV mask exposure
光通过掩模选择受光区域，再由显影把胶内响应变成形貌。UV mask exposure
表面准备Surface preparation
从表面状态开始，控制污染、残胶与界面。Start with contamination, residues and interfaces.
等离子体清洗与活化Plasma cleaning & activation
通过活性物种与表面作用，去除部分有机残留或改变表面状态。Plasma-generated species remove some organic residues or modify the surface state.
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曝光与直写Exposure & direct writing
区分光源、成像方式与束形，先定义图形。Distinguish illumination, imaging and beam shape.
紫外掩模曝光UV mask exposure
光通过掩模选择受光区域，再由显影把胶内响应变成形貌。A mask selects illuminated regions; development turns a resist response into topography.
深紫外投影曝光DUV projection
常见 KrF 248 nm、ArF 193 nm 深紫外光配合投影光学，将掩模图形成像到胶层。Common KrF 248 nm and ArF 193 nm sources work with projection optics to image a mask pattern onto resist.
极紫外曝光EUV exposure
使用约 13.5 nm 极紫外光、反射式掩模与反射光学，在真空光路中传递图形并曝光。Approximately 13.5 nm EUV light uses reflective masks and mirrors to convey a pattern through a vacuum optical path.
激光直写Laser direct writing
依照数字版图，用光学束斑或调制光场直接曝光感光材料。A focused or spatially modulated optical field exposes photosensitive material from digital pattern data.
电子束直写Electron-beam writing
聚焦电子束将数字图形写入电子敏感胶。A focused electron beam writes digital patterns into electron-sensitive resist.
可变成形束电子束曝光Variable-shaped beam
把图形分解成可变尺寸的矩形等单元，利用成形电子束逐单元曝光。Pattern fracturing creates writable shapes, exposed as shots of a variable-shaped electron beam.
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图形转移与复制Pattern transfer & replication
去除、保留、复制与搬移，是不同的成形机制。Removal, retention, replication and relocation are distinct.
干法刻蚀Dry etching
通过反应性物种和／或离子作用去除暴露材料。Reactive species, ions or both remove accessible material.
湿法刻蚀Wet etching
液相反应去除可接触的材料，并输运反应产物。Liquid-phase reactions remove accessible material while reaction products are transported away.
剥离 Lift-offLift-off
溶解除去牺牲胶及其上方多余膜层，保留开口内的沉积膜。Removing sacrificial resist and unwanted overlying film leaves deposited material in the former openings.
纳米压印Nanoimprint
模板把形貌复制到可流动材料，再通过固化或冷却保形。A template replicates relief into deformable material, then curing or cooling fixes the shape.
微转印Micro-transfer printing
通过印章拾取已有微结构，再定位并释放到接收基底。A stamp picks up preformed microstructures and places them on a receiving substrate.
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沉积镀膜与生长Deposition & growth
从材料输运到表面反应，再到晶体生长。From material transport and surface chemistry to crystal growth.
蒸发镀膜 / PVDEvaporation / PVD
材料蒸发后到达可达表面，逐渐形成薄膜。Evaporated material reaches accessible surfaces and accumulates as a film.
磁控溅射Magnetron sputtering
离子轰击靶材，溅出的材料输运到基底形成薄膜。Ion bombardment ejects target material, which travels to the substrate and forms a film.
反应磁控溅射Reactive sputtering
在溅射过程中引入反应性气体，参与形成化合物薄膜。Reactive gas participates during sputtering to form a compound film.
离子辅助光学镀膜Ion-assisted deposition
在薄膜生长同时引入离子辅助，影响膜层致密性与界面。Ion assistance during growth influences film packing and interfaces.
化学气相沉积Chemical vapor deposition
气态前驱体参与反应，在表面生成薄膜并排出副产物。Gaseous precursors react to form a solid film while by-products leave.
原子层沉积Atomic layer deposition
通过分隔的、交替自限表面反应循环生长薄膜。Separated, alternating self-limiting surface reactions build a film through repeated cycles.
外延生长Epitaxial growth
晶体薄膜与下方晶体保持特定取向关系，形成材料结构。A crystalline layer grows with an orientation relationship to the underlying crystal.
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掺杂与热处理Doping & thermal processing
改变材料内部的组分与状态，而不只是表面形貌。Modify composition and state within the material.
离子注入Ion implantation
加速离子进入材料，在一定深度范围形成组分分布。Accelerated ions penetrate a solid and form a distributed composition profile.
退火与激活Annealing & activation
热处理可改变缺陷、应力与掺杂电学状态，结果取决于材料和热历程。A thermal history can change defects, stress and electrical dopant activation.
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集成与后道Integration & finishing
让独立结构成为能够连接、测试与交付的样品。Connect, finish and prepare structures for testing.
键合与封装Bonding & packaging
通过合适界面与连接方式，将结构集成为可使用的样品。Compatible interfaces and interconnects integrate separate structures into usable samples.
切割、减薄与抛光Dicing, thinning & polishing
围绕最终外形、厚度和表面质量安排机械与化学机械处理。Mechanical and chemical-mechanical methods address final dimensions, thickness and surface quality.
表征与测试Metrology & testing
用形貌、膜厚、成分、电学或光学测量验证目标。Topographic, thickness, compositional, electrical and optical measurements check the intended result.
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原理示意不等于平台自有设备或已确认加工能力，具体路线需要结合样品评估。Principle studies do not imply owned equipment or confirmed capability. Routes require sample-specific review.