紫外掩模曝光UV mask exposure
光通过掩模选择受光区域，再由显影把胶内响应变成形貌。A mask selects illuminated regions; development turns a resist response into topography.
在首页观看原理演示Watch the interactive study ↗紫外掩模曝光UV mask exposure
光通过掩模选择受光区域，再由显影把胶内响应变成形貌。UV mask exposure
关键区别Key distinction
这里是正胶掩模曝光示意，常见 i-line 为 365 nm；接触／接近曝光与投影曝光不同，也不能代表全部光刻技术。This positive-resist mask example includes the common 365 nm i-line context. Contact/proximity exposure differs from projection and does not represent all lithography.
项目输入Project inputs
胶种与胶厚、掩模、套刻、基底反射Resist type and thickness, mask, overlay and substrate reflection.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.