晶体表面A crystalline surface
排列节点表示基底的有序取向。Ordered nodes symbolize the substrate orientation.
外延生长Epitaxial growth
晶体薄膜与下方晶体保持特定取向关系，形成材料结构。A crystalline layer grows with an orientation relationship to the underlying crystal.
在首页观看原理演示Watch the interactive study ↗外延生长Epitaxial growth
晶体薄膜与下方晶体保持特定取向关系，形成材料结构。Epitaxial growth
关键区别Key distinction
不把所有薄膜都叫外延；同质／异质外延、MBE／MOCVD 是不同分类维度。Not every film is epitaxial. Homo/heteroepitaxy and MBE/MOCVD describe different classification axes.
观察路径What to observe
物质到达生长面Species reach the growth surface
材料输运到表面并参与晶体生长。Incoming species participate in crystal growth at the surface.
延续取向关系Continue the orientation
新层与下方晶体有取向关系，不是任意堆积。The new layer has an orientation relationship to the substrate.
应变与缺陷边界Strain and defect limits
晶格失配可能引入应变和缺陷，图中不是完美率承诺。Mismatch may produce strain and defects; this is not a perfection claim.
项目输入Project inputs
衬底、晶向、晶格失配、应变、缺陷与掺杂Substrate, orientation, lattice mismatch, strain, defects and doping.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.