干法刻蚀Dry etching
通过反应性物种和／或离子作用去除暴露材料。Reactive species, ions or both remove accessible material.
在首页观看原理演示Watch the interactive study ↗干法刻蚀Dry etching
通过反应性物种和／或离子作用去除暴露材料。Dry etching
关键区别Key distinction
RIE、ICP-RIE、DRIE 与离子束刻蚀不是一个方法；这里展示方向性去除。RIE, ICP-RIE, DRIE and ion-beam etching are distinct. The animation illustrates directional removal.
项目输入Project inputs
材料、掩模、深度、侧壁、选择比与损伤Material, mask, depth, sidewall profile, selectivity and damage.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.