曝光与直写Exposure & direct writing

电子束直写Electron-beam writing

聚焦电子束将数字图形写入电子敏感胶。A focused electron beam writes digital patterns into electron-sensitive resist.

在首页观看原理演示Watch the interactive study ↗

原理图解准备中Preparing the mechanism study

电子束直写Electron-beam writing

聚焦电子束将数字图形写入电子敏感胶。Electron-beam writing

非等比例原理示意,不代表设备或加工能力。Not-to-scale explanation, not an equipment or capability claim.

关键区别Key distinction

电子束曝光不是电子束蒸发,也不是直接刻蚀;散射会影响邻近区域。Exposure differs from electron-beam evaporation and etching. Scattering can affect adjacent features.

项目输入Project inputs

胶体系、剂量、邻近效应修正、拼接与充电Resist, dose, proximity correction, field stitching and charging.
整理项目需求Prepare a project brief ↗

进一步阅读Further reading

相关技术专题Related technical topic ↗
JEOL:电子束曝光原理 ↗

动画为非等比例原理示意,粒子、颜色、光路及材料厚度为解释性表达,不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.