沉积镀膜与生长Deposition & growth

化学气相沉积Chemical vapor deposition

气态前驱体参与反应,在表面生成薄膜并排出副产物。Gaseous precursors react to form a solid film while by-products leave.

在首页观看原理演示Watch the interactive study ↗

原理图解准备中Preparing the mechanism study

化学气相沉积Chemical vapor deposition

气态前驱体参与反应,在表面生成薄膜并排出副产物。Chemical vapor deposition

非等比例原理示意,不代表设备或加工能力。Not-to-scale explanation, not an equipment or capability claim.

关键区别Key distinction

LPCVD、PECVD 等路线的活化方式和热预算不同;不是单纯粒子堆积。LPCVD and PECVD differ in activation and thermal budget. This is not just incoming particles accumulating.

观察路径What to observe

前驱体输运Precursor transport

气态反应物进入表面附近,不是蒸发靶材。Gaseous reactants reach the surface, not an evaporated target.

表面反应Surface reaction

活化后的反应过程生成固态薄膜。Activated reactions generate solid film.

副产物离开By-products leave

生成膜与排出副产物是不同的物质去向。Film formation and by-product removal have distinct paths.

连续生长Continued growth

此处是概念 CVD,未指定 LPCVD 或 PECVD 配方。This conceptual CVD study does not specify an LPCVD or PECVD recipe.

项目输入Project inputs

膜材、前驱体、热预算、覆盖、氢含量与应力Film, precursors, temperature budget, coverage, hydrogen content and stress.
整理项目需求Prepare a project brief ↗

进一步阅读Further reading

相关技术专题Related technical topic ↗
Applied Materials:CVD 机理 ↗

动画为非等比例原理示意,粒子、颜色、光路及材料厚度为解释性表达,不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.