适合什么需求Good For
硅各向异性腐蚀、氧化层或氮化硅开窗、金属图形湿法腐蚀、牺牲层释放，以及对低等离子体损伤有要求的项目。Anisotropic silicon etch, dielectric openings, metal patterning, sacrificial release and low-plasma-damage projects.
专业词入口Topic Entry
湿法刻蚀，先把材料、晶向、掩膜与侧蚀边界说清楚。Wet etching starts with material, crystal orientation, mask and undercut limits.
湿法刻蚀可用于硅、二氧化硅、氮化硅和多种金属的去除或图形转移。是否适合取决于材料栈、腐蚀液兼容性、晶向、选择比、侧蚀、温度与搅拌条件，而不只是目标深度。Wet etching can remove silicon, dielectrics and metals, with feasibility driven by chemistry, crystal orientation, selectivity, undercut and process control.
湿法刻蚀Wet etching
液相反应去除可接触的材料，并输运反应产物。Wet etching
需要准备什么Prepare First
完整材料栈与膜厚、硅片晶向、开口尺寸、目标深度或剩余厚度、掩膜材料、正背面保护、样品尺寸数量和清洗限制。Full stack, thickness, wafer orientation, opening size, target depth, mask, backside protection, sample format and cleaning limits.
常见风险Common Risks
侧蚀导致尺寸偏差，针孔或掩膜脱落，材料选择比不足，晶向造成轮廓变化，腐蚀残留，以及正背面或已有金属被意外侵蚀。Undercut, mask pinholes, poor selectivity, orientation-dependent profiles, residue and unintended attack on existing layers.
推荐下一步Next Step
先把“用药液腐蚀”转换成材料栈、轮廓与验收条件。Translate the wet-etch request into stack, profile and acceptance conditions.
请提交材料栈、晶向、图形开口、目标深度与容差、掩膜和保护方式、可接受侧蚀、样品数量及后续工艺。素微 会先判断湿法路线与 RIE、ICP 等干法路线的边界，并核对腐蚀液兼容性和验收方法。Share the stack, orientation, openings, depth tolerance, mask, protection, undercut limit, quantity and downstream steps so wet and dry routes can be compared.
提交湿法刻蚀需求Submit wet-etch request查看刻蚀工艺导航Open etch route