新材料项目，先问材料能承受什么。For emerging materials, ask what the material can survive first.
二维材料、氮化硅、氮化铝、III-V、量子点、异质结构和低损伤器件，往往不是设备能力不够，而是温度、等离子、溶剂、充电和污染窗口太窄。2D materials, SiN, AlN, III-V stacks, quantum dots, heterostructures and low-damage devices often hinge on temperature, plasma, solvent, charging and contamination limits.
目标结构、测试目标、Raman/PL/AFM/SEM/电学测试要求。Target structure and Raman, PL, AFM, SEM or electrical measurement needs.
常见风险Risks to Check
电子束充电、曝光损伤、等离子损伤和表面吸附污染。E-beam charging, exposure damage, plasma damage and adsorbed contamination.
转移残留、溶剂不兼容、低温/高温步骤改变材料性质。Transfer residue, solvent incompatibility and temperature steps changing material properties.
小样品定位、mark 不清、SEM 观察本身影响后续性能。Small-sample alignment, unclear marks and SEM observation affecting later performance.
推荐判断路径Suggested Route
新材料项目不要只问“有没有设备”，要先列出材料禁区。Do not only ask whether equipment exists. List the material red lines first.
01先确认材料禁区：温度、等离子、溶剂、水洗、SEM、电荷积累和机械接触。Define red lines: temperature, plasma, solvent, water rinse, SEM, charging and mechanical contact.
02按图形和材料耐受选择低剂量 EBL、光刻、低损伤刻蚀、低温沉积或转移后处理。Choose low-dose EBL, lithography, gentle etch, low-temperature deposition or post-transfer handling by tolerance.
03把 Raman、PL、AFM、电学或低温测试作为反馈，形成下一轮工艺修正。Use Raman, PL, AFM, electrical or low-temperature tests as feedback for the next process round.
二维材料与转移样品2D Materials and Transfers
二维材料项目要说明样品位置、尺寸、层数、转移胶残留、是否能受水洗和等离子。很多步骤看似常规，对二维材料可能已经很重。For 2D materials, state location, size, layer count, transfer residue and whether water or plasma is allowed. A normal step can be heavy for a 2D sample.
这些材料常和光学损耗、刻蚀选择比、侧壁粗糙度和膜应力挂钩。建议把材料来源、膜厚和目标测试指标放在第一封需求里。These materials often tie to optical loss, etch selectivity, sidewall roughness and film stress. Include source, thickness and target measurement in the first request.
量子和低温器件更要关注污染、接触、电阻、表面氧化和热预算。能否加工只是第一关，后续性能是否被工艺破坏更关键。Quantum and cryogenic devices need extra attention to contamination, contact, resistance, oxidation and thermal budget. Fabrication is only the first gate; performance after process is the point.